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dc.contributor.authorNinan, Gisa Grace-
dc.contributor.authorRajeshmon, V G-
dc.contributor.authorSudha Kartha, C-
dc.contributor.authorVijayakumar, K P-
dc.date.accessioned2015-09-01T05:03:26Z-
dc.date.available2015-09-01T05:03:26Z-
dc.date.issued2014-
dc.identifier.citationAIP Conference Proceedings 1591, 1440 (2014); doi: 10.1063/1.4872989en_US
dc.identifier.isbn978-0-7354-1225-5-
dc.identifier.urihttp://hdl.handle.net/123456789/43-
dc.description.abstractSnS thin films were deposited using Chemical Spray Pyrolysis (CSP) technique at a substrate temperature of 415 oC. Resistivity of pristine SnS thin film was 120 Ω.cm. In order to decrease resistivity, in-situ copper doping was done and its effects on the structural, optical and electrical properties were studied. Percentage of Cu was varied as 2%, 4%, 6%, 8% and 10% of tin in the precursor solution. Resistivity decreased with minimum resistivity of 1.6 Ω.cm for the sample doped with 6% copper. Beyond 6 % doping, resistivity increased. All the films were n type irrespective of doping.en_US
dc.language.isoenen_US
dc.publisherAIP Publishingen_US
dc.subjectSpray techniquesen_US
dc.subjectThin filmsen_US
dc.subjectElectrical propertiesen_US
dc.subjectOptical propertiesen_US
dc.titleCu doping: An effective method for improving optoelectronic properties of sprayed SnS thin filmsen_US
dc.typeArticleen_US
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