Please use this identifier to cite or link to this item:
http://localhost:8082/xmlui/handle/123456789/43| Title: | Cu doping: An effective method for improving optoelectronic properties of sprayed SnS thin films |
| Authors: | Ninan, Gisa Grace Rajeshmon, V G Sudha Kartha, C Vijayakumar, K P |
| Keywords: | Spray techniques Thin films Electrical properties Optical properties |
| Issue Date: | 2014 |
| Publisher: | AIP Publishing |
| Citation: | AIP Conference Proceedings 1591, 1440 (2014); doi: 10.1063/1.4872989 |
| Abstract: | SnS thin films were deposited using Chemical Spray Pyrolysis (CSP) technique at a substrate temperature of 415 oC. Resistivity of pristine SnS thin film was 120 Ω.cm. In order to decrease resistivity, in-situ copper doping was done and its effects on the structural, optical and electrical properties were studied. Percentage of Cu was varied as 2%, 4%, 6%, 8% and 10% of tin in the precursor solution. Resistivity decreased with minimum resistivity of 1.6 Ω.cm for the sample doped with 6% copper. Beyond 6 % doping, resistivity increased. All the films were n type irrespective of doping. |
| URI: | http://hdl.handle.net/123456789/43 |
| ISBN: | 978-0-7354-1225-5 |
| Appears in Collections: | Conference Publications |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.