Defect analysis of CZTS thin films using photoluminescence technique

Please use this identifier to cite or link to this item: http://localhost:8082/xmlui/handle/123456789/39

Full metadata record

DC Field	Value	Language
dc.contributor.author	Rajeshmon, V G	-
dc.contributor.author	Sudha Kartha, C	-
dc.contributor.author	Vijayakumar, K P	-
dc.date.accessioned	2015-07-29T07:25:32Z	-
dc.date.available	2015-07-29T07:25:32Z	-
dc.date.issued	2013	-
dc.identifier.citation	AIP Conf. Proc. 1512, 464 (2013)	en_US
dc.identifier.isbn	978-0-7354-1133-3	-
dc.identifier.uri	http://hdl.handle.net/123456789/39	-
dc.description.abstract	Photoluminescence (PL) technique was used to identify defect levels in Copper Zinc Tin Sulphide (CZTS) thin films deposited using Chemical Spray Pyrolysis (CSP). Films were deposited for different Cu:Zn:Sn:S ratios. An emission was observed at 0.8 eV. It was monitored from 15K to room temperature and activation energy was calculated. Excitation power dependent studies were done to analyze the type of transition.	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.subject	Photoluminescence	en_US
dc.subject	CZTS	en_US
dc.subject	Defects	en_US
dc.title	Defect analysis of CZTS thin films using photoluminescence technique	en_US
dc.type	Article	en_US
Appears in Collections:	Conference Publications

Files in This Item:

File	Description	Size	Format
AIP CZTS PL.pdf		768.53 kB	Adobe PDF	View/Open