Spray pyrolysed Cu2ZnSnS4 Ssolar cell using cadmium free buffer layer

Abstract

Cu2ZnSnS4 (CZTS) thin film solar cells were fabricated using CZTS as absorber layer and In2S3 as buffer layer. Both of these layers were prepared by using chemical spray pyrolysis (CSP) technique. Since the resistance of the In2S3 buffer layer plays an important role in the performance parameters of the cell we have done excitu doping of In2S3 by using indium. For an optimum doping, the cell exhibited an open circuit voltage of 430 mV, a short circuit current density of 8.02 mA/cm 2, a fill factor of 45% and a conversion efficiency of 1.5%. We avoided the usual cyanide etching and CdS buffer layer, both toxic, for the fabrication of the cell.